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December 2013
FCD9N60NTM
N-Channel SupreMOS ? MOSFET
600 V, 9 A, 385 m Ω
Features
? R DS(on) = 330 m Ω ( Typ.) @ V GS = 10 V, I D = 4.5 A
? Ultra Low Gate Charge (Typ. Q g = 17.8 nC)
? Low Effective Output Capacitance
? 100% Avalanche Tested
? RoHS Compliant
Description
The SupreMOS ? MOSFET is Fairchild Semiconductor ’s next
generation of high voltage super-junction (SJ) technology
employing a deep trench filling process that differentiates it from
the conventional SJ MOSFETs. This advanced technology and
precise process control provides lowest Rsp on-resistance,
superior switching performance and ruggedness. SupreMOS
MOSFET is suitable for high frequency switching power con-
verter applications such as PFC, server/telecom power, FPD TV
power, ATX power, and industrial power applications.
D
D
G
S
D-PAK
G
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
(T C = 25 C)
- Derate above 25 o C
C
C
Symbol
V DSS
V GSS
I D
I DM
E AS
I AR
E AR
dv/dt
P D
T J , T STG
T L
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current - Pulsed (Note 1)
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt Ruggedness
Peak Diode Recovery dv/dt (Note 3)
o
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
FCD9N60N TM
600
±30
9.0
5.7
27
135
9.0
9.3
100
15
92.6
0.74
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/ o C
o
o
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
FCD9N60N TM
1.35
62.5
Unit
o C/W
?2010 Fairchild Semiconductor Corporation
FCD9N60NTM Rev. C0
1
www.fairchildsemi.com
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